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| 1N5186US thru 1N5190US VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION DESCRIPTION This "fast recovery" rectifier diode series is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3.0 Amp rated rectifiers for working peak reverse voltages from 100 to 600 volts are hermetically sealed with voidless-glass construction using an internal "Category I" metallurgical bond. These devices are also available in military qualified axial-leaded packages by deleting the "US" suffix. Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages. IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com APPEARANCE WWW . Microsemi .C OM Package "E" or D-5B FEATURES * * * * * * Surface mount equivalent to the popular JEDEC registered 1N5186 to 1N5190 series Voidless hermetically sealed glass package Triple-Layer Passivation Internal "Category I" Metallurgical bonds Working Peak Reverse Voltage 100 to 600 Volts. Further options in screening in accordance with MILPRF-19500/424 for JAN, JANTX, and JANTXV by adding a MQ, MX, or MV prefix respectively, e.g. MX1N5186US, MV1N5187US, etc. Axial-leaded package equivalents also available (see separate data sheet for 1N5186 thru 1N5190) * * * * * * * * APPLICATIONS / BENEFITS Fast recovery 3 Amp rectifiers 100 to 600 V Military and other high-reliability applications General rectifier applications including bridges, half-bridges, catch diodes, etc. High forward surge current capability Extremely robust construction Low thermal resistance Controlled avalanche with peak reverse power capability Inherently radiation hard as described in Microsemi MicroNote 050 * MAXIMUM RATINGS * * * * * * Junction & Storage Temperature: -65 C to +175 C Thermal Resistance: 10oC/W junction to end cap Thermal Impedance: 1.5oC/W @ 10 ms heating time Average Rectified Forward Current (IO): 3.0 Amps @ TA = 25C and 0.700 Amps at TA = 150C Forward Surge Current: 80 Amps @ 8.3 ms half-sine Solder Temperatures: 260C for 10 s (maximum) o o MECHANICAL AND PACKAGING * * * * * * * CASE: Hermetically sealed voidless hard glass with Tungsten slugs TERMINATIONS: End caps are solid silver with Tin/Lead (Sn/Pb) finish MARKING: Cathode band only POLARITY: Cathode indicated by band TAPE & REEL option: Standard per EIA-481-B WEIGHT: 539 mg See package dimensions on last page MAXIMUM REVERSE CURRENT IR @ VRWM o o 25 C 100 C A A 2.0 100 MAXIMUM REVERSE RECOVERY TIME trr ns 150 200 250 300 400 AVERAGE RECTIFIED CURRENT AMPS IO ELECTRICAL CHARACTERISTICS WORKING PEAK REVERSE VOLTAGE VRWM VOLTS 100V 200V 400V 500V 600V MINIMUM BREAKDOWN VOLTAGE VBR @ 50A VOLTS 120V 240V 480V 550V 660V FORWARD VOLTAGE VF @ 9A (pulsed) MIN MAX VOLTS VOLTS 0.9V 1.5V 1N5186 thru 1N5190 TYPE 1N5186US 1N5187US 1N5188US 1N5189US 1N5190US 25 C AMPS 3.0 3.0 3.0 3.0 3.0 o 150 C AMPS 0.7 0.7 0.7 0.7 0.7 o Copyright 2004 12-10-2004 REV A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 1N5186US thru 1N5190US VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION Symbol VBR VRWM VF IR trr SYMBOLS & DEFINITIONS Definition Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. WWW . Microsemi .C OM PACKAGE DIMENSIONS NOTE: This Package Outline has also previously been identified as "D-5B" INCHES MIN BL BD ECT S .205 .137 .019 .003 MAX .225 .142 .028 --MIN 5.21 3.48 0.48 0.08 mm MAX 5.72 3.61 0.711 --A B C PAD LAYOUT INCHES 0.288 0.070 0.155 mm 7.32 1.78 3.94 Note: If mounting requires adhesive separate from the solder, an additional 0.080 inch diameter contact may be placed in the center between the pads as an optional spot for cement. 1N5186 thru 1N5190 Copyright 2004 12-10-2004 REV A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 |
Price & Availability of 1N5190US
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